## Abstract The paper deals with the analysis of pair diffusion models in semiconductor technology. The underlying model contains reactionβdriftβdiffusion equations for the mobile point defects and dopantβdefect pairs as well as reaction equations for immobile dopants which are coupled with a nonβl
β¦ LIBER β¦
ChemInform Abstract: Dopant Electromigration in Semiconductors
β Scribed by D. CAHEN; L. CHERNYAK
- Publisher
- John Wiley and Sons
- Year
- 2010
- Weight
- 23 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0931-7597
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