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Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties

✍ Scribed by Ossicini, S.; Degoli, E.; Iori, F.; Luppi, E.; Magri, R.; Cantele, G.; Trani, F.; Ninno, D.


Book ID
125991514
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
592 KB
Volume
87
Category
Article
ISSN
0003-6951

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Electroluminescence from B- and P-doped
✍ V. Ovchinnikov; S. Novikov; T. Toivola; J. Sinkkonen πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 149 KB

The ability of different impurities to enhance the electroluminescence (EL) of Si nanoclusters (nc-Si) in SiO 2 has been investigated. Doped nc-Si films were fabricated by implantation of Si C , P C and/or B C into thermal SiO 2 and subsequent heat treatment. The photoluminescence and EL of differen