Electroluminescence from B- and P-doped
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V. Ovchinnikov; S. Novikov; T. Toivola; J. Sinkkonen
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Article
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2005
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Elsevier Science
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English
β 149 KB
The ability of different impurities to enhance the electroluminescence (EL) of Si nanoclusters (nc-Si) in SiO 2 has been investigated. Doped nc-Si films were fabricated by implantation of Si C , P C and/or B C into thermal SiO 2 and subsequent heat treatment. The photoluminescence and EL of differen