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Formation and Segregation Energies of B and P Doped and BP Codoped Silicon Nanowires

✍ Scribed by Peelaers, Hartwin; Partoens, Bart; Peeters, François M.


Book ID
118070331
Publisher
American Chemical Society
Year
2006
Tongue
English
Weight
221 KB
Volume
6
Category
Article
ISSN
1530-6984

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Hydrogen passivation of P donors and def
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Hydrogen passivation of phosphorus (P) donors and defects in P-doped silicon nanowires (SiNWs) were investigated by electron spin resonance (ESR) at 4.2 K. P doping was performed during the synthesis of SiNWs by laser ablation. Phosphorus doping into substitutional sites of crystalline Si in SiNWs w