Electroluminescence from B- and P-doped silicon nanoclusters

✍ Scribed by V. Ovchinnikov; S. Novikov; T. Toivola; J. Sinkkonen

• Book ID: 104050978
• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 149 KB
• Volume: 36
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2005.02.063

✦ Synopsis

The ability of different impurities to enhance the electroluminescence (EL) of Si nanoclusters (nc-Si) in SiO 2 has been investigated. Doped nc-Si films were fabricated by implantation of Si C , P C and/or B C into thermal SiO 2 and subsequent heat treatment. The photoluminescence and EL of differently doped nc-Si produced by annealing at 1100 and 1000 8C were compared. It was found that EL related to impact excitation by hot electrons and its improvement is caused by reducing of phase separation temperature for doped nc-Si films.