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Terahertz electroluminescence from boron-doped silicon devices

โœ Scribed by Adam, T. N.; Troeger, R. T.; Ray, S. K.; Lv, P.-C.; Kolodzey, J.

Book ID
118229018
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
350 KB
Volume
83
Category
Article
ISSN
0003-6951

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โœ V. Ovchinnikov; S. Novikov; T. Toivola; J. Sinkkonen ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 149 KB

The ability of different impurities to enhance the electroluminescence (EL) of Si nanoclusters (nc-Si) in SiO 2 has been investigated. Doped nc-Si films were fabricated by implantation of Si C , P C and/or B C into thermal SiO 2 and subsequent heat treatment. The photoluminescence and EL of differen