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Simultaneous In situ Measurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry

โœ Scribed by Koshimizu, Chishio; Ohta, Takayuki; Matsudo, Tatsuo; Tsuchitani, Shigeki; Ito, Masafumi


Book ID
120472484
Publisher
Institute of Pure and Applied Physics
Year
2012
Tongue
English
Weight
816 KB
Volume
51
Category
Article
ISSN
0021-4922

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