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Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy

✍ Scribed by Oishi, Shingo; Hijikata, Yasuto; Yaguchi, Hiroyuki; Yoshida, Sadafumi


Book ID
118057676
Publisher
Institute of Pure and Applied Physics
Year
2006
Tongue
English
Weight
148 KB
Volume
45
Category
Article
ISSN
0021-4922

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In-situ Determination of the Carrier Con
✍ Pristovsek, M. ;Tsukamoto, S. ;Koguchi, N. ;Han, B. ;Haberland, K. ;Zettler, J.- πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 139 KB πŸ‘ 1 views

We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole