## Abstract Experimental studies have been conducted to investigate the influence of dislocations on the properties of CdZnTe crystals. Dislocations were introduced into CdZnTe wafers by means of bending deformation at elevated temperature. The average infrared (IR) transmittance of CdZnTe wafers a
โฆ LIBER โฆ
Simulations of Dislocations in CdZnTe/SL/Si Substrates
โ Scribed by Anthony J. Ciani; Peter W. Chung
- Book ID
- 107455734
- Publisher
- Springer US
- Year
- 2009
- Tongue
- English
- Weight
- 563 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0361-5235
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