Transmission electron microscopy (TEM) and synchrotron radiation double-crystal topography (SRDT) have been employed to investigate Si/SiGe/Si heterostructures grown by ultra-high vacuum chemical vapor deposition (UHVCVD) on bonded Si-on-insulator (SOI) wafers. A configuration of misfit dislocation
β¦ LIBER β¦
Dislocation motion in Sb-doped SiGe on Si substrate
β Scribed by Yamashita, Yoshifumi ;Matsunaga, Takuya ;Funaki, Toru ;Fushimi, Tatsuya ;Kamiura, Yoichi
- Book ID
- 115561462
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 447 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0031-8965
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