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Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate

✍ Scribed by Junji Yamanaka; Kentaro Sawano; Kumiko Suzuki; Kiyokazu Nakagawa; Yusuke Ozawa; Takeo Hattori; Yasuhiro Shiraki


Book ID
108289124
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
245 KB
Volume
508
Category
Article
ISSN
0040-6090

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Investigation of strain-relaxed SiGe thi
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Si 1Γ€x Ge x thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 β€’ 10 15 cm Γ€2 ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to cha