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Impact of misfit dislocations on wavefront distortion in Si/SiGe/Si optical waveguides

✍ Scribed by A. Trita; F. Bragheri; I. Cristiani; V. Degiorgio; D. Chrastina; D. Colombo; G. Isella; H. von Känel; F. Gramm; E. Müller; M. Döbeli; E. Bonera; R. Gatti; F. Pezzoli; E. Grilli; M. Guzzi; L. Miglio

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
526 KB
Volume
282
Category
Article
ISSN
0030-4018

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✦ Synopsis

Silicon-rich SiGe alloys represent a promising platform for the development of large-area single-mode optical waveguides to be integrated in silicon-based optical circuits. We find that SiGe layers epitaxially grown on Si successfully guide radiation with a 1.55 lm wavelength, but, beyond a critical core thickness, their optical properties are strongly affected by the clustering of misfit dislocations at the interface between Si and SiGe, leading to a significant perturbation of the local refractive index. Transmission electron microscopy and micro-Raman spectroscopy, together with finite-element simulations, provide a complete analysis of the impact of dislocations on optical propagation.

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