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Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics

โœ Scribed by X. Loussier; D. Munteanu; J.L. Autran


Book ID
116671690
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
461 KB
Volume
355
Category
Article
ISSN
0022-3093

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