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A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-κ gate dielectrics

✍ Scribed by J.L. Autran; D. Munteanu; M. Bescond; M. Houssa; A. Said

Book ID: 116668599
Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 367 KB
Volume: 351
Category: Article
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2005.04.034

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