The subject of this paper is the extension of the simulation tool T2 for the application to Reactive Physical Vapor Deposition. The implemented models are briefly described and applied to the deposition of TaN x barriers. The influence of the nitrogen flow and the substrate bias on the deposition ra
โฆ LIBER โฆ
Simulation of the deposition process in PVD-technology
โ Scribed by O. Knotek; E. Lugscheider; C. Barimani; P. Eckert; G.v. Hayn
- Book ID
- 117627051
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 578 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0927-0256
No coin nor oath required. For personal study only.
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