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Simulation of oxygen vacancy induced phenomena in ferroelectric thin films

✍ Scribed by Li, Kwok Tung; Lo, Veng Cheong

Book ID: 118119155
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 368 KB
Volume: 97
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1846947

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