The formation of Si/CoSi 2/Si heterostructures by high-dose cobalt implantation was studied for the range of implantation energy 20-200 keV. Various implantation and post-implantation annealing procedures were investigated in order to determine the conditions for producing the thinnest possible CoSi
β¦ LIBER β¦
Simulation of irradiation of thin layers of biological matter by low-energy photon radiation
β Scribed by Belousov, A. V.; Osipov, A. S.
- Book ID
- 121624657
- Publisher
- Allerton Press, Inc.
- Year
- 2013
- Tongue
- English
- Weight
- 290 KB
- Volume
- 68
- Category
- Article
- ISSN
- 0027-1349
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