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Simulation of degradation of dielectric breakdown field of thermal SiO2 films due to voids in Si wafers

✍ Scribed by Satoh, Y.; Shiota, T.; Furuya, H.


Book ID
114538039
Publisher
IEEE
Year
2000
Tongue
English
Weight
123 KB
Volume
47
Category
Article
ISSN
0018-9383

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