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SIMS depth profile correction for the study of the first step of the diffusion of boron in silicon

✍ Scribed by B. Gautier; J.C. Dupuy; B. Semmache; G. Prudon

Book ID
114170247
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
428 KB
Volume
142
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES

Effectiveness and Limits of the Deconvol
Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon
✍ Gautier, B.; Dupuy, J. C.; Prost, R.; Prudon, G. πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 533 KB

In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proÐles of boron-doped layers in silicon. The real SIMS proÐles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq