Photochemical etching (PCE) as a method for preparation of InP semiconductor plan view samples for the transmission electron microscope is demonstrated and compared to the methods of ion milling and chemical thinning. PCE can produce small area samples for TEM analysis quickly and accurately. Also,
Simple method for the preparation of inp based samples for TEM investigation
✍ Scribed by Barna, Árpád ;Pécz, Béla
- Publisher
- Wiley (John Wiley & Sons)
- Year
- 1991
- Tongue
- English
- Weight
- 398 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0741-0581
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✦ Synopsis
A novel, rapid, and simple method is described for the preparation of InP based samples for investigation by transmission electron microscopy (TEM). The key feature of the technique is Ar+ ion bombardment in an iodine ambient. Cross sectional micrographs of AuiInP samples are shown as an example. The technique developed produces a large area of transparent region.
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