Silicon—a new substrate for GaN growth
✍ Scribed by S. Pal; C. Jacob
- Book ID
- 110643961
- Publisher
- Springer-Verlag
- Year
- 2004
- Tongue
- English
- Weight
- 35 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0250-4707
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📜 SIMILAR VOLUMES
## Abstract Three‐dimensionally patterned Si(111) substrates are used to grow GaN based heterostructures by metalorganic vapour phase epitaxy, with the goal of fabricating well controlled, defect reduced GaN‐based nanoLEDs. In contrast to other approaches to achieve GaN nanorods, we employed silico
## Abstract A lithography‐independent method for achieving self‐organized growth of silicon nanowires by means of a Chemical‐Vapor‐Deposition process is investigated using a nanoporous alumina template on a 〈100〉 oriented silicon substrate. The position of the nanowires is determined by the locatio