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A new architecture for self-organized silicon nanowire growth integrated on a 〈100〉 silicon substrate

✍ Scribed by Buttard, D. ;David, T. ;Gentile, P. ;Hertog, M. Den ;Baron, T. ;Ferret, P. ;Rouvière, J. L.

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
727 KB
Volume
205
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

A lithography‐independent method for achieving self‐organized growth of silicon nanowires by means of a Chemical‐Vapor‐Deposition process is investigated using a nanoporous alumina template on a 〈100〉 oriented silicon substrate. The position of the nanowires is determined by the location of gold colloids, acting as catalysts, which are initially deposited at the bottom of the pores over large areas of the sample. The direction of growth is guided by the pore axis, which is perpendicular to the silicon substrate surface. Results from scanning and transmission electron microscopy are presented and discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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✍ Ie-Hong Hong; Yen-Chieh Liao; Shang-Chieh Yen 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 778 KB

## Abstract Here, bottom‐up nanofabrication for the two‐dimensional self‐organization of a highly integrated, well‐defined silicon nanowire (SiNW) mesh on a naturally‐patterned Si(110)–16 × 2 surface by controlling the lateral growths of two non‐orthogonal 16 × 2 domains is reported. This self‐orde