๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Silicon Vertically Integrated Nanowire Field Effect Transistors

โœ Scribed by Goldberger, Josh; Hochbaum, Allon I.; Fan, Rong; Yang, Peidong


Book ID
120526974
Publisher
American Chemical Society
Year
2006
Tongue
English
Weight
194 KB
Volume
6
Category
Article
ISSN
1530-6984

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Silicon nanowire tunneling field-effect
โœ BjoรŒยˆrk, M. T.; Knoch, J.; Schmid, H.; Riel, H.; Riess, W. ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 461 KB
High Performance Silicon Nanowire Field
โœ Cui, Yi; Zhong, Zhaohui; Wang, Deli; Wang, Wayne U.; Lieber, Charles M. ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› American Chemical Society ๐ŸŒ English โš– 156 KB

Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon n

ZnO Nanowire Field-Effect Transistors
โœ Pai-Chun Chang; Jia Grace Lu ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› IEEE ๐ŸŒ English โš– 999 KB