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ZnO Nanowire Field-Effect Transistors

✍ Scribed by Pai-Chun Chang; Jia Grace Lu


Book ID
114619197
Publisher
IEEE
Year
2008
Tongue
English
Weight
999 KB
Volume
55
Category
Article
ISSN
0018-9383

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Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon n