Silicon oxide films deposited by excimer laser chemical vapour deposition
✍ Scribed by T Szorényi; P González; M.D Fernández; J Pou; B León; M Pérez-Amor
- Book ID
- 113204948
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 332 KB
- Volume
- 193-194
- Category
- Article
- ISSN
- 0040-6090
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📜 SIMILAR VOLUMES
We have deposited tungsten on silicon from WF 6 and H 2 by laser-assisted chemical vapour deposition. An ArF excimer laser was aligned parallel to the substrate. The deposition experiments were performed to investigate reactions between WF 6 and the silicon substrate. We investigated the roughness a
Silicon oxide films have been deposited on silicon wafers at low temperature by irradiation of the substrates with an ArF (A = 193 nm) excimer laser beam in a SiH, and N20 atmosphere. A systematic study of the growth rate and properties of the films as a function of the processing parameters (gas co