Silica deposition by excimer-laser-induc
Silica deposition by excimer-laser-induced chemical vapour deposition in perpendicular configuration
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Betty LeΓ³n; Armin Klumpp; PΓo GonzΓ‘lez; Eduardo G. Parada; Dolores FernΓ‘ndez; Ju
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Article
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1996
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John Wiley and Sons
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English
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Silicon oxide films have been deposited on silicon wafers at low temperature by irradiation of the substrates with an ArF (A = 193 nm) excimer laser beam in a SiH, and N20 atmosphere. A systematic study of the growth rate and properties of the films as a function of the processing parameters (gas co