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Silicon luminescence techniques for the characterization of hot-carrier and degradation phenomena in MOS devices

✍ Scribed by Luca Selmi

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 815 KB
Volume: 28
Category: Article
ISSN: 0167-9317
DOI: 10.1016/0167-9317(95)00053-b

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