Silicon Integrated Circuits. Advances in Materials and Device Research

✍ Scribed by Dawon Kahng (Eds.)

Publisher: Academic Press Inc
Year: 1981
Tongue: English
Leaves: 302
Edition: 1st
Category: Library

No coin nor oath required. For personal study only.

✦ Table of Contents

Content:
Applied Solid State Science, Page ii
Front Matter, Page iii
Copyright, Page iv
List of Contributors, Page vii
Preface, Pages ix-x, Dawon Kahng
Physics and Chemistry of Impurity Diffusion and Oxidation of Silicon, Pages 1-108, RICHARD B. FAIR
Silicon Power Field Controlled Devices and Integrated Circuits, Pages 109-274, B. JAYANT BALIGA
Author Index, Pages 275-283
Subject Index, Pages 285-297

📜 SIMILAR VOLUMES

Silicon Integrated Circuits. Advances in

📁 Silicon Integrated Circuits. Advances in Materials and Device Research

✍ Dawon Kahng (Eds.) 📂 Library 📅 1985 🏛 Academic Press 🌐 English

Advanced Technologies for Next Generatio

📁 Advanced Technologies for Next Generation Integrated Circuits (Materials, Circuits and Devices)

✍ Ashok Srivastava (editor), Saraju P. Mohanty (editor) 📂 Library 📅 2020 🏛 The Institution of Engineering and Technology 🌐 English

Although existing nanometer CMOS technology is expected to remain dominant for the next decade, new non-classical devices are being developed as the potential replacements of silicon CMOS, in order to meet the ever-present demand for faster, smaller, more efficient integrate circuits. Many

Silicon Quantum Integrated Circuits: Sil

📁 Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations

✍ E. Kasper, D.J. Paul 📂 Library 📅 2005 🏛 Springer 🌐 German

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mi

Silicon Quantum Integrated Circuits: Sil

📁 Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations

✍ Prof. Erich Kasper, Prof. D.J. Paul (auth.) 📂 Library 📅 2005 🏛 Springer-Verlag Berlin Heidelberg 🌐 English

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in

Advanced nanoelectronics: post-silicon m

📁 Advanced nanoelectronics: post-silicon materials and devices

✍ Hussain, Muhammad Mustafa 📂 Library 📅 2019 🌐 English

Advances in Silicones and Silicone-Modif

📁 Advances in Silicones and Silicone-Modified Materials

✍ Stephen J. Clarson, Michael J. Owen, Steven D. Smith, and Mark E. Van Dyke (Eds. 📂 Library 📅 2010 🏛 American Chemical Society 🌐 English

Content: PREFACE ; DEDICATION ; INTRODUCTION ; 1. ADVANCED MATERIALS CONTAINING THE SILOXANE BOND ; STEPHEN J. CLARSON ; SILICONES ; 2. PROPERTIES AND APPLICATIONS OF SILICONES ; MICHAEL J. OWEN ; 3. POLYMORPHS OF OCTAPHENYLCYCLOTETRASILOXANE ; ABHILASHA M. BARUAH, ANIRBAN KARMAKAR, AND JUBARAJ