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Silicon di-interstitial in ion-implanted silicon

✍ Scribed by Lee, Young Hoon


Book ID
121669753
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
352 KB
Volume
73
Category
Article
ISSN
0003-6951

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## Abstract Electroluminescent silicon is very desirable for its potential applications in computing and telecommunications. Plasma Ion Implantation (PII) is a means to modify the surface and sub‐surface properties of silicon to produce luminescent centres. Silicon to be treated with PII is immerse