✦ LIBER ✦

Silicon carbide control in the EFG system

✍ Scribed by Rajendran, S.; Larrousse, M.; Bathey, B.R.; Kalejs, J.P.

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 372 KB
Volume: 128
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(93)90344-v

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

On the transport kinetics of silicon car

On the transport kinetics of silicon carbide in the silicon-scandium-carbon system

✍ R.T. Yakimova; I.Y. Yanchev 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 337 KB

Study of silicon carbide epitaxial growt

Study of silicon carbide epitaxial growth kinetics in the SiC-C system

✍ S.K. Lilov; Yu.M. Tairov; V.F. Tsvetkov 📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 350 KB

Preparation of silicon carbide–silicon n

Preparation of silicon carbide–silicon nitride fibers by the controlled pyrolysis of polycarbosilazane precursors

✍ B. G. Penn; F. E. Ledbetter III; J. M. Clemons; J. G. Daniels 📂 Article 📅 1982 🏛 John Wiley and Sons 🌐 English ⚖ 481 KB 👁 2 views

The vacuum-fusion determination of gases

The vacuum-fusion determination of gases in silicon carbide

✍ A. Colombo; R. Vivian; E. Rodari 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 271 KB

Doping process control in silicon epitax

Doping process control in silicon epitaxy (I). System identification

✍ Dipl.-Chem. G. Kósza; Dip1.-Phys. T. Morgenstern; Dr. F. Richter; Dr. P. Valkó 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 451 KB

The transition behaviour of the phosphorus incorporation in silicon epitaxial layers grown in a CVD reactor has been investigated, considering the reactor as a linear control system with u = lg pOpR, ( t ) as the input and y = lg N ( t ) as the output. The response of system to both upward and downw

A study of the transition between growth

A study of the transition between growth of stoichiometric and silicon-excess silicon carbide by CVD in the system MTS/H2

✍ Dr. Andrei Josiek; Dr. Francis Langlais; Dr. Xavier Bourrat 📂 Article 📅 1996 🏛 John Wiley and Sons 🌐 English ⚖ 889 KB

Under conditions of medium decomposition of MTS (10-90 X), a transition between region A (growth of nearly stoichiometric Sic) and region B (Siexcess Sic deposition) may be indueed by the variations of total flow rate, total pressure or temperature in relatively small intervals. After the modificati