Silicon-Based Millimeter-Wave Devices

✍ Scribed by P. Russer, E. Biebl (auth.), Dr.-Ing. Johann-Friedrich Luy, Professor Dr. techn. Peter Russer (eds.)

• Publisher: Springer-Verlag Berlin Heidelberg
• Year: 1994
• Tongue: English
• Leaves: 358
• Series: Springer Series in Electronics and Photonics 32
• Edition: 1
• Category: Library

✦ Synopsis

Silicon-Based Millimeter-Wave Devices describes field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium devices: physics and RF properties of the heterobipolar transistor and quantum effect devices such as the resonant tunneling element are described. The integration of devices in monolithic circuits is explained and advanced technologies are presented along with the self-mixing oscillator operation. Finally sensor and system applications are considered.

✦ Table of Contents

Front Matter....Pages I-XVI
Fundamentals....Pages 1-46
Transit-Time Devices....Pages 47-88
Schottky Contacts on Silicon....Pages 89-148
SiGe Heterojunction Bipolar Transistors....Pages 149-192
Silicon Millimeter-Wave Integrated Circuits....Pages 193-214
Self-Mixing Oscillators....Pages 215-239
Silicon Millimeter-Wave Integrated Circuit Technology....Pages 241-284
Future Devices....Pages 285-322
Future Applications....Pages 323-338
Back Matter....Pages 339-343

✦ Subjects

Optical and Electronic Materials; Communications Engineering, Networks; Electronics and Microelectronics, Instrumentation