๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Silicon-based light emission after ion implantation

โœ Scribed by M. Kittler; T. Arguirov; A. Fischer; W. Seifert

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
312 KB
Volume
27
Category
Article
ISSN
0925-3467

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Hydrogen in silicon: State, reactivity a
Hydrogen in silicon: State, reactivity and evolution after ion implantation
โœ G.F. Cerofolini; G. Ottaviani ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 408 KB

Hydrogen passivation of interface traps and group 11I acceptors is described in a unified fashion as due to the interaction of atomic hydrogen with dangling bonds'. This picture requires" that the ground state coordination of group III acceptors is" not tetrahedral. Hydrogen can be found in silicon

Si-based materials and devices for light
Si-based materials and devices for light emission in silicon
โœ Maria Eloisa Castagna; Salvatore Coffa; Mariantonietta Monaco; Liliana Caristia; ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 259 KB

We report on the fabrication and performances of extremely e cient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1:54 m electroluminescence (EL) at 300 K with a 10% external quantum e ciency, comparable to