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Silicon amorphization by ion beam with radiation heating

✍ Scribed by Danilin, A. B. ;Dvurechenskii, A. V. ;Ryazantsev, I. A. ;Timofeev, P. A. ;Verner, V. D.


Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
525 KB
Volume
65
Category
Article
ISSN
0031-8965

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Radiation damage and amorphization of si
✍ J.K.N. Lindner; R. Zuschlag; E.H. te Kaat πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 359 KB

Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10 ~3 to 5 x 10 ~7 N cm -2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by