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SiGe HBTs and HFETs

✍ Scribed by U König; H Dämbkes

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
894 KB
Volume
38
Category
Article
ISSN
0038-1101

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📜 SIMILAR VOLUMES

Sirenza SiGe HBT discrete
Sirenza SiGe HBT discrete
📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 57 KB

## Microelectronics M/A-COM has launched a pair of new low-cost 2-stage driver amplifiers, the MAAMSS0072 and MAAMSS0073, to extend its successful family of broadband, high linearity driver amplifiers. The broad frequency range, high linearity and reliability make this M/A-COM product family ideall

SiGe HBTs on bonded wafer substrates
SiGe HBTs on bonded wafer substrates
✍ S Hall; A.C Lamb; M Bain; B.M Armstrong; H Gamble; H.A.W El Mubarek; P Ashburn 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 241 KB

Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator (SOI) substrates. The devices have application in low power, radio-frequency electronics. The bonded wafer substrates incorporate poly-Si filled, deep trenches for isolation. A novel select

Comparison of wideband Gilbert micromixe
Comparison of wideband Gilbert micromixers using SiGe HBT and GaInP/GaAs HBT technologies
✍ Jin-Siang Syu; Chinchun Meng; Chih-Kai Wu; Guo-Wei Huang 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 281 KB

## Abstract Wideband downconversion mixers are demonstrated by using both 0.35‐μm SiGe heterojunction bipolar transistor (HBT) and 2‐μm GaInP/GaAs HBT technologies. A micromixer topology is implemented in the RF port while a differential type shunt–shunt feedback amplifier and a differential‐to‐sin