๐”– Scriptorium
โœฆ   LIBER   โœฆ

๐Ÿ“

Sic Materials And Devices (Selected Topics in Electronics and Systems)

โœ Scribed by Michael Shur, Sergey Rumyantsev, Michael Levinshtein


Year
2006
Tongue
English
Leaves
342
Category
Library

โฌ‡  Acquire This Volume

No coin nor oath required. For personal study only.

โœฆ Synopsis


After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices power switching Schottky diodes and high temperature MESFETs are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.


๐Ÿ“œ SIMILAR VOLUMES


Sic Materials and Devices, Volume 2 (Sel
โœ Michael Shur ๐Ÿ“‚ Library ๐Ÿ“… 2007 ๐ŸŒ English

This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and

Wide Bandgap Semiconductor Electronics a
โœ Towhidur Razzak (editor), Yuewei Zhang (editor) ๐Ÿ“‚ Library ๐Ÿ› World Scientific Publishing ๐ŸŒ English

<span>With the dawn of Gallium Oxide (Ga2O3) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide

Wide Bandgap Semiconductor Electronics A
โœ Uttam Singisetti, Towhidur Razzak, Yuewei Zhang ๐Ÿ“‚ Library ๐Ÿ“… 2020 ๐Ÿ› World Scientific Publishing Company ๐ŸŒ English

<p>With the dawn of Gallium Oxide (Ga2O) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide band

Gan-based Materials And Devices: Growth,
โœ R F Davis, M. S. Shur ๐Ÿ“‚ Library ๐Ÿ“… 2004 ๐ŸŒ English

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio

Radiation Defect Engineering (Selected T
โœ Kozlovski Vitali, Abrosimova Vera ๐Ÿ“‚ Library ๐Ÿ“… 2005 ๐Ÿ› World Scientific Publishing Company ๐ŸŒ English

The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modifi