This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and
Sic Materials And Devices (Selected Topics in Electronics and Systems)
โ Scribed by Michael Shur, Sergey Rumyantsev, Michael Levinshtein
- Year
- 2006
- Tongue
- English
- Leaves
- 342
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices power switching Schottky diodes and high temperature MESFETs are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
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