Advanced High Speed Devices (Selected Topics in Electronics and Systems)

✍ Scribed by Michael Shur

• Tongue: English
• Leaves: 194
• Category: Library

✦ Table of Contents

Cover
......Page 1
Title
......Page 2
SELECTED TOPICS IN ELECTRONICS AND SYSTEMS......Page 3
Copyright
......Page 5
PREFACE......Page 6
CONTENTS......Page 10
SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED
ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY
DIODES FOR THz POWER GENERATION......Page 12
5-TERMINAL THz GaN BASED TRANSISTOR WITH FIELD- AND SPACECHARGE
CONTROL ELECTRODES......Page 18
PERFORMANCE COMPARISON OF SCALED III-V AND Si BALLISTIC
NANOWIRE MOSFETs......Page 26
A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR
HIGH PERFORMANCE APPLICATIONS......Page 34
EMISSION AND INTENSITY MODULATION OF TERAHERTZ
ELECTROMAGNETIC RADIATION UTILIZING 2-DIMENSIONAL
PLASMONS IN DUAL-GRATING-GATE HEMT’S......Page 43
MILLIMETER WAVE TO TERAHERTZ IN CMOS......Page 64
THE EFFECTS OF INCREASING AlN MOLE FRACTION ON THE
PERFORMANCE OF AlGaN ACTIVE REGIONS CONTAINING NANOMETER
SCALE COMPOSITIONALLY INHOMOGENEITIES......Page 77
SURFACE ACOUSTIC WAVE PROPAGATION IN GaN-ON-SAPPHIRE
UNDER PULSED SUB-BAND ULTRAVIOLET ILLUMINATION......Page 85
SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES......Page 92
MONTE CARLO SIMULATIONS OF In0.75Ga0.25As MOSFETs AT 0.5 V
SUPPLY VOLTAGE FOR HIGH-PERFORMANCE CMOS......Page 100
THE FIRST 70NM 6-INCH GaAs PHEMT MMIC PROCESS......Page 108
HIGH-PERFORMANCE 50-NM METAMORPHIC HIGH ELECTRONMOBILITY
TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES......Page 114
MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES
ON SAPPHIRE......Page 120
PERFORMANCE OF MOSFETs ON REACTIVE-ION-ETCHED GaN
SURFACES......Page 127
HIGH CURRENT DENSITY/HIGH VOLTAGE AlGaN/GaN HFETs
ON SAPPHIRE......Page 134
InAlN/GaN MOS-HEMT WITH THERMALLY GROWN OXIDE......Page 141
GaN TRANSISTORS FOR POWER SWITCHING AND
MILLIMETER-WAVE APPLICATIONS......Page 149
4-NM AlN BARRIER ALL BINARY HFET WITH SiNx GATE DIELECTRIC......Page 157
EFFECT OF GATE OXIDE PROCESSES ON 4H-SiC MOSFETs ON
(000-1) ORIENTED SUBSTRATE......Page 164
CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN
1.2kV 4H-SiC VERTICAL POWER MOSFET......Page 170
PACKAGING AND WIDE-PULSE SWITCHING OF 4 MM x 4 MM SILICON
CARBIDE GTOs......Page 176
BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR
HYBRID-ELECTRIC VEHICLES......Page 185