Wide Bandgap Semiconductor Electronics And Devices: 63 (Selected Topics in Electronics and Systems)

✍ Scribed by Uttam Singisetti, Towhidur Razzak, Yuewei Zhang

• Publisher: World Scientific Publishing Company
• Year: 2020
• Tongue: English
• Leaves: 258
• Category: Library

✦ Synopsis

With the dawn of Gallium Oxide (Ga2O) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.

Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field newcomers and experienced alike.

This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2Oand diamond.

✦ Table of Contents

Contents
Preface
Substrate Effects in GaN-on-Silicon RF Device Technology
1. Introduction
2. Parasitic Channel Formation and RF Loss in GaN-on-Si Technology
2.1. Physical Origin of Parasitic Channel Formation
2.2. Effect of Parasitic Channel on RF Performance of GaN-on-Si Devices
2.3. Minimizing the Influence of the Substrate Parasitic Channel
3. Back-bias Effects and Buffer-induced Current Collapse in GaN-on-Si
3.1. Current Collapse in GaN HEMTs due to Buffer Traps
3.2. Substrate Depletion and Back-biasing in Highly Resistive Si Substrates
3.3. Suppression of Buffer-induced Current Collapse for GaN-on-Si RF Devices
4. Temperature-dependent Substrate Loss in GaN-on-Si RF Technology
4.1. Background – Substrate Conductivity and Temperature
4.2. Simulation Framework and Experimental Benchmarking of CPW Line Loss
4.3. Substrate Loss – Temperature, Frequency and Starting Substrate Resistivity Dependencies
4.4. Comparison of Strategies to Minimize RF Substrate Loss in GaN-on-Si
5. Conclusions
Acknowledgments
References
Gallium Oxide Field Effect Transistors — Establishing New Frontiers of Power Switching and Radiation-Hard Electronics
1. Introduction
2. Lateral Depletion-Mode Ga2O3 FETs
2.1. MESFET
2.2. MOSFET with Si-ion-implanted source/drain ohmic contacts
2.3. MOSFET with Si-ion-implanted channel and source/drain ohmic contacts
2.4. Field-plated MOSFETs
2.5. Critical field strength in Ga2O3 MOSFETs
3. Thermal Characteristics of Ga2O3 MOSFETs
4. Ga2O3 MOSFETs for Radiation-Hard Electronics
5. Lateral Enhancement-Mode Ga2O3 FETs
5.1. Overview
5.2. Planar MOSFETs
5.3. Fin-array MOSFETs
6. Current Aperture Vertical Ga2O3 MOSFET
7. Summary
Acknowledgment
References
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
1. Introduction
2. Device Fabrication
3. DC and Small Signal Characterizations
4. Large Signal Characterization at 40 GHz
5. Raman Thermography Measurement
6. Conclusion
Acknowledgments
References
Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics
1. Introduction
2. β-Ga2O3 Electronics
3. Diamond Electronics
4. Conclusion
Acknowledgment
References
Application of Atom Probe Tomography for Advancing GaN Based Technology
1. Introduction
2. Atom Probe Tomography
2.1. Composition Measurement Accuracy
2.2. Structure Inhomogeneities and the Energy Landscape
2.3. Elemental Incorporation
2.4. Detecting and Quantifying Dopants and Impurities
3. Conclusion
References
β-(Al,Ga)2O3 for High Power Applications — A Review on Material Growth and Device Fabrication
1. Introduction
2. Epitaxial Growth
3. Ga2O3-Based Field-Effect Transistors
References
Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
1. Properties
2. Crystal Structure of β-Ga2O3
3. Homoepitaxy on (100) Plane
4. Facet Stability
5. Carrier Concentration / Compensation
6. Mobility Limits
7. Alloy Formation
8. Conclusion
Acknowledgments
References
Theory of High Field Transport in β-Ga2O3
1. Introduction
1.1.β-Ga2O3 — potential and applications
1.2. Motivation for transport studies in β-Ga2O3
2. Microscopic Interactions
2.1. Electronic structure and lattice vibrations
2.2. Electron-phonon interactions
2.2.1. Polar EPI
2.2.2. Non-polar EPI
2.3. Electron-electron interactions
3. High-Field Transport
3.1. Velocity-field curves
3.2. Impact ionization co-efficients
3.3. Avalanche phenomenon
4. Summary
References
Ultra-Wide Bandgap AlxGa1-xN Channel Transistors
1. Introduction
2. Ohmic Contacts to High Al-Composition AlxGa1-xN Films
2.1. Contact formation to GaN
2.2. Contact formation to AlGaN
2.2.1. Metal-semiconductor based approaches
2.2.2. Reverse Al-composition graded contact layer
3. Advanced Metal-Polar AlGaN Device Design
4. AlxGa1-xN Channel Device Demonstrations
5. Future Directions
6. Conclusion
Acknowledgments
References
On the Progress Made in GaN Vertical Device Technology
1. Introduction
2. Advantage of Vertical GaN Devices Over Others
3. Current Aperture Vertical Electron Transistors
4. GaN MOSFETs
5. Conclusion
Acknowledgment
References
Modeling and Simulation of Quasi-Ballistic III-Nitride Transistors for RF and Digital Applications
1. Introduction
2. Design of III-Nitride Transistors
2.1. RF device design
2.2. Digital device design
3. Analytic Device Modeling
3.1. Charge modeling
3.1.1. One-dimensional (1D) electrostatics
3.1.2. Two-dimensional (2D) electrostatics
3.1.3. Two-dimensional electron gas (2DEG)
3.1.4. One-dimensional electron gas (1DEG)
3.2. Velocity modeling
3.3. Secondary effects
3.3.1. Parasitic source/drain Schottky contact
3.3.2. Access region resistance
3.3.3. Self heating
3.4. Dynamic effects
3.4.1. Q-V model in the saturation region
3.4.2. Q-V model in the linear region
3.4.3. Fringing capacitances
3.4.4. Unified Q-V model
4. Model Validation
4.1. 105 nm and 42 nm gate-length InAlN/GaN HEMTs (experimental data)
4.2. 50-nm gate-length AlGaN/GaN HEMT (numerically simulated)
4.3. GaN NW n-FET (experimentally measured)
5. Summary
Acknowledgments
References
Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics
1. Introduction
2. History of III-Nitride Tunnel Junctions
3. Recent Progress in III-Nitride Tunnel Junctions
3.1. III-nitride tunnel junctions grown by molecular beam epitaxy
3.2. III-nitride tunnel junctions grown by metal organic chemical vapor deposition
3.3. III-nitride tunnel junctions grown by hybrid MOCVD/MBE growth
4. Conclusion
References