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SiC-based phototransistor with a tunnel MOS emitter

โœ Scribed by Grekhov, I.V.; Ivanov, P.A.; Samsonova, T.P.; Shulekin, A.F.; Vexler, M.I.

Book ID
114537590
Publisher
IEEE
Year
1999
Tongue
English
Weight
110 KB
Volume
46
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES

Operation of a bipolar transistor with a
Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300 K
โœ I.V Grekhov; K Schmalz; A.F Shulekin; K Tittelbach-Helmrich; M.I Vexler ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 296 KB

We demonstrate for the first time the capability of tunnel MOS emitter transistors to operate in the temperature range from 300 K down to 4.2 K without reduction of current gain. This device suffers much less from carrier freeze out than conventional bipolar transistors with p-n junction based emitt