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Si1 −xGex/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates

✍ Scribed by Denisov, S. A.; Matveev, S. A.; Chalkov, V. Yu.; Shengurov, V. G.; Drozdov, Yu. N.; Stepikhova, M. V.; Shengurov, D. V.; Krasilnik, Z. F.

Book ID
125394862
Publisher
Springer
Year
2014
Tongue
English
Weight
348 KB
Volume
48
Category
Article
ISSN
1063-7826

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Electroluminescence and photoluminescenc
Electroluminescence and photoluminescence from Si1−xGex alloys grown on (100) silicon by molecular beam epitaxy
✍ D.C. Houghton; J.-P. Noël; N.L. Rowell 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 757 KB

Photoluminescence has been observed from Si~ \_xGex alloy layers, superlattices and non-periodic multilayers where x was varied from 0 to 0.6. A p-type Si082Ge0 is alloy layer 200 nm thick, grown by molecular beam epitaxy (MBE), has been fabricated into a mesa diode which operated as a light-emittin