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Photoluminescence Lifetime and Structure of Molecular Beam Epitaxy Porous Si1 − xGex Grown on Si

✍ Scribed by B. Ünal; M. Parkinson; S.C. Bayliss; T. Naylor; D. Schröder

Book ID
110278042
Publisher
Springer
Year
2000
Tongue
English
Weight
49 KB
Volume
7
Category
Article
ISSN
1380-2224

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Electroluminescence and photoluminescenc
Electroluminescence and photoluminescence from Si1−xGex alloys grown on (100) silicon by molecular beam epitaxy
✍ D.C. Houghton; J.-P. Noël; N.L. Rowell 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 757 KB

Photoluminescence has been observed from Si~ \_xGex alloy layers, superlattices and non-periodic multilayers where x was varied from 0 to 0.6. A p-type Si082Ge0 is alloy layer 200 nm thick, grown by molecular beam epitaxy (MBE), has been fabricated into a mesa diode which operated as a light-emittin