Si doping of MBE grown bulk GaAsSb on InP

✍ Scribed by H. Detz; P. Klang; A.M. Andrews; W. Schrenk; G. Strasser

• Book ID: 104022053
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 209 KB
• Volume: 323
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.10.014

✦ Synopsis

In this work a detailed study of Si-doped GaAs 0.51 Sb 0.49 grown lattice-matched to InP substrates by molecular beam epitaxy is presented. Electronic characterization using Hall measurements revealed n-type behavior, although with reduced carrier concentrations and mobilities compared to GaAs, ranging from 8.5 Â 10 15 to 1.8 Â 10 18 cm À 3 . Electron mobilities of up to 3120 cm 2 /V s at roomtemperature and 3530 cm 2 /V s at 140 K were determined for the lowest doping levels. The doping efficiency decreased from 52.6% at high doping levels to 13.5% for 8.5 Â 10 15 cm À 3 .