Growth of bulk and superlattice GaAsSb layers on InP
โ Scribed by A. Giani; F. Pascal-Delannoy; J. Camassel; A. G. Norman
- Book ID
- 110296521
- Publisher
- Springer
- Year
- 2001
- Tongue
- English
- Weight
- 403 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0261-8028
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๐ SIMILAR VOLUMES
In this work a detailed study of Si-doped GaAs 0.51 Sb 0.49 grown lattice-matched to InP substrates by molecular beam epitaxy is presented. Electronic characterization using Hall measurements revealed n-type behavior, although with reduced carrier concentrations and mobilities compared to GaAs, rang
We have used the recursion method to calculate bulk and surface electronic structures of a (GaP)l/(InP)l (111) strained-layer superlattice. The obtained energy gap for the stable superlattice is 1.88eV. which is smaller by 0.31eV than the average of the gaps of bulk GaP(2.9leV) and InP(1.48eV). We s