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Electrical and optical properties of silicon doped InP grown by gas source MBE

✍ Scribed by Yoshitaka Morishita; Masayuki Imaizumi; Mitsunobu Gotoda; Shigemitsu Maruno; Yoshinori Nomura; Hitoshi Ogata

Book ID
107790383
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
384 KB
Volume
104
Category
Article
ISSN
0022-0248

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Optical properties of gas source MBE gro
Optical properties of gas source MBE grown AlInP on GaAs
✍ Y. Gu; Y.G. Zhang; A.Z. Li; H. Li πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 449 KB

Optical properties of silicon (Si) doped Al x In 1-x P grown by gas source molecular beam epitaxy (GSMBE) have been investigated by using photoluminescence (PL). The PL peaks of Al x In 1-x P shift to higher energy side as Al mole fraction increases in direct bandgap region, and the fractions of str