Indium tin oxide/(n+-p) silicon solar ce
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A. Chaoui; R. Ardebili; J.C. Manifacier
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Article
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1985
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Elsevier Science
β 290 KB
The solar cell structure consists of a shallow n+-p junction prepared on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 Β°C. A conductive layer of indium tin oxide is then deposited by spray pyrolysis. Both polycrystalline and monocrystalline silicon have been used. Th