๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Short channel threshold dependence of the inversion channel heterostructure field effect transistor

โœ Scribed by Taylor, G.W.; Kiely, P.A.


Book ID
114535911
Publisher
IEEE
Year
1994
Tongue
English
Weight
286 KB
Volume
41
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


DC and RF Characteristics of AlN/GaN Dop
โœ Daumiller, I. ;Schmid, P. ;Kohn, E. ;Kirchner, C. ;Kamp, M. ;Ebeling, K. J. ;Pon ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 113 KB

First small signal, large signal and rf power characteristics of experimental 3 mm gate length AlN/GaN devices are reported between RT and 200 C. A high drain breakdown of 42 V and the absence of dispersion effects indicate that this challenging heterostructure is indeed attractive for the developme