The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence
Shallow impurity states and the free exciton binding energy in gallium phosphide
β Scribed by A.A. Kopylov; A.N. Pikhtin
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 380 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0038-1098
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