The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence
Shallow donors in GaN—The binding energy and the electron effective mass
✍ Scribed by B.K. Meyer; D. Volm; A. Graber; H.C. Alt; T. Detchprohm; A. Amano; I. Akasaki
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 366 KB
- Volume
- 95
- Category
- Article
- ISSN
- 0038-1098
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