𝔖 Bobbio Scriptorium
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Session R: Low temperature grown III–V materials

Book ID
112819816
Publisher
Springer US
Year
1993
Tongue
English
Weight
467 KB
Volume
22
Category
Article
ISSN
0361-5235

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📜 SIMILAR VOLUMES

Point defects in III–V materials grown b
Point defects in III–V materials grown by molecular beam epitaxy at low temperature
✍ P. Hautojärvi; J. Mäkinen; S. Palko; K. Saarinen; C. Corbel; L. Liszkay 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 676 KB

The present understanding of the point defects in GaAs and InP grown by molecular beam epitaxy at low temperature (LT) is briefly reviewed. New results on vacancies and ion-type acceptors obtained by positron annihilation are given. Depending on the growth temperature, Ga vacancies or small vacancy

Fabrication of III-V nano- and microtube
Fabrication of III-V nano- and microtubes using MOVPE grown materials
✍ Paetzelt, H. ;Gottschalch, V. ;Bauer, J. ;Herrnberger, H. ;Wagner, G. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 780 KB

## Abstract We fabricated III–V nano‐ and microtubes with a diameter in the range of 140 nm to 6 µm using strained heterostructures with high quality interfaces, which were grown by metal‐organic vapor‐phase epitaxy (MOVPE). Investigations of the two‐layer system BGaAs/InGaAs which forms tubes by s

Fabrication of III-V nano- and microtube
Fabrication of III-V nano- and microtubes using MOVPE grown materials
✍ Paetzelt, H. ;Gottschalch, V. ;Bauer, J. ;Herrnberger, H. ;Wagner, G. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 332 KB

## Abstract In this issue's Editor's Choice [1], Paetzelt et al. present a novel class of nano‐ and micro‐dimensional sized objects formed by releasing thin strained multi‐layers from their substrate by selective etching of a sacrificial layer after growth by metal‐organic vapor‐phase epitaxy (MOVP