Fabrication of III-V nano- and microtubes using MOVPE grown materials

✍ Scribed by Paetzelt, H. ;Gottschalch, V. ;Bauer, J. ;Herrnberger, H. ;Wagner, G.

• Book ID: 105364388
• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 332 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200690009

✦ Synopsis

Abstract

In this issue's Editor's Choice [1], Paetzelt et al. present a novel class of nano‐ and micro‐dimensional sized objects formed by releasing thin strained multi‐layers from their substrate by selective etching of a sacrificial layer after growth by metal‐organic vapor‐phase epitaxy (MOVPE).

The cover picture is an SEM image of a multi‐layer tube rolled in 〈110〉 direction with a diameter of around 6 µm. This tube was fabricated from the layer system: GaAs buffer/AlAs sacrificial layer/In~0.37~Ga~0.63~As strained layer/Al~0.35~Ga~0.65~As bottom barrier/GaAs quantum well and Al~0.35~Ga~0.65~As top barrier.

The first author, Hendrik Paetzelt, is current a Ph.D. student at the Institute of Inorganic Chemistry of the University of Leipzig. He investigates the growth of highly strained thin films and selective wetchemical etching techniques for the fabrication and the subsequent characterization of nano‐ and microtubes from multi‐layer systems. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)