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Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers

✍ Scribed by N. V. Alkeev; S. V. Averin; A. A. Dorofeev; P. Velling; E. Khorenko; W. Prost; F. J. Tegude

Book ID
111443718
Publisher
Springer
Year
2007
Tongue
English
Weight
183 KB
Volume
41
Category
Article
ISSN
1063-7826

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✍ D. Landheer; G.C. Aers; Z.R. Wasilewski πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 496 KB

We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu