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Semiconductor Simulations Using a Coupled Quantum Drift‐Diffusion Schrödinger–Poisson Model

✍ Scribed by El Ayyadi, Asma; Jüngel, Ansgar


Book ID
118193143
Publisher
Society for Industrial and Applied Mathematics
Year
2005
Tongue
English
Weight
296 KB
Volume
66
Category
Article
ISSN
0036-1399

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📜 SIMILAR VOLUMES


A Coupled Schrödinger Drift-Diffusion Mo
✍ P. Degond; A. El Ayyadi 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 297 KB

In this paper, we derive a coupled Schrödinger drift-diffusion self-consistent stationary model for quantum semiconductor device simulations. The device is decomposed into a quantum zone (where quantum effects are expected to be large) and a classical zone (where they are supposed negligible). The S